cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance document title 256kx8 bit low power and low voltage cmos static ram revision history revision no. 0.0 remark advance history design target draft data may 26, 1998 the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the speci fications and products. samsung electronics will answer to your questions. if you have any questions, please contact the samsung branch office s.
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance 256kx8 bit low power and low voltage cmos static ram general description the km68v2000a and KM68U2000A families are fabricated by samsung s advanced cmos process technology. the family support various operating temperature ranges and have various package types for user flexibility of system design. the family also support low data retention voltage for battery back- up operation with low data retention current. features process technology : tft organization : 256kx8 power supply voltage km68v2000a family : 3.0v ~ 3.6v KM68U2000A family : 2.7v ~ 3.3v low data retention voltage : 2v(min) three state output and ttl compatible package type : 32-tsop1-0820f, 32-tsop1-0813.4f pin description name function cs 1 ,cs 2 chip select input oe output enable input we write enable input a 0 ~a 17 address inputs i/o 1 ~i/o 8 data inputs/outputs vcc power vss ground n.c. no connection product family 1. the parameters are tested with 30pf test load 2. km68v2000a family = 35ma product family operating temperature vcc range speed(ns) power dissipation pkg type standby (i sb1 , max) operating (i cc2, max) km68v2000al-l commercial(0~70 c) 3.0~3.6v 70/85 10 m a 30ma 2) 32-tsop1-0820f 32-tsop1-0813.4f KM68U2000Al-l 2.7~3.3v 70 1) /100 km68v2000ali-l industrial(-40~85 c) 3.0~3.6v 70 1) /100 15 m a KM68U2000Ali-l 2.7~3.3v 70 1) /100 functional block diagram a11 a9 a8 a13 we cs2 a15 vcc a17 a16 a14 a12 a7 a6 a5 a4 oe a10 cs 1 i/o8 i/o7 i/o6 i/o5 i/o4 vss i/o3 i/o2 i/o1 a0 a1 a2 a3 32-stsop1 type - forward 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 samsung electronics co., ltd. reserves the right to change products and specifications without notice. a2 precharge circuit. memory array 1024 rows 256 8 columns i/o circuit column select clk gen. row select a0 a1 a17 a6 a5 a3 a4 a16 a15 a14 a13 a12 a11 a9 i/o 1 data cont data cont i/o 8 a10 a8 a7 cs 1 we oe cs 2 control logic 32-tsop1
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance product list commercial temperature products(0~70 c) industrial temperature products(-40~85 c) part name function part name function km68v2000alt-7l km68v2000alt-8l KM68U2000Alt-7l KM68U2000Alt-10l km68v2000altg-7l km68v2000altg-8l KM68U2000Altg-7l KM68U2000Altg-10l 32-tsop1 f, 70ns, 3.3v,ll 32-tsop1 f, 85ns, 3.3v,ll 32-tsop1 f, 70ns, 3.0v, ll 32-tsop1 f, 100ns, 3.0v, ll 32-stsop1 f, 70ns, 3.3v,ll 32-stsop1 f, 85ns, 3.3v,ll 32-stsop1 f, 70ns, 3.0v, ll 32-stsop1 f, 100ns, 3.0v, ll km68v2000alti-7l km68v2000alti-10l KM68U2000Alti-7l KM68U2000Alti-10l km68v2000altgi-7l km68v2000altgi-10l KM68U2000Altgi-7l KM68U2000Altgi-10l 32-tsop1 f, 70ns, 3.3v,ll 32-tsop1 f, 100ns, 3.3v,ll 32-tsop1 f, 70ns, 3.0v, ll 32-tsop1 f, 100ns, 3.0v, ll 32-stsop1 f, 70ns, 3.3v,ll 32-stsop1 f, 100ns, 3.3v,ll 32-stsop1 f, 70ns, 3.0v, ll 32-stsop1 f, 100ns, 3.0v, ll functional description 1. x means don t care (must be in high or low states) cs 1 cs 2 oe we i/o mode power h x 1) x 1) x 1) high-z deselected standby x 1) l x 1) x 1) high-z deselected standby l h h h high-z output disabled active l h l h dout read active l h x 1) l din write active absolute maximum ratings 1) 1. stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. functional oper ation should be restricted to recommended operating condition. exposure to absolute maximum rating conditions for extended periods may affect r eliability. item symbol ratings unit remark voltage on any pin relative to vss v in ,v out -0.5 to v cc +0.5 v - voltage on vcc supply relative to vss v cc -0.3 to 4.6 v - power dissipation p d 1.0 w - storage temperature t stg -65 to 150 c - operating temperature t a 0 to 70 c km68v2000al, KM68U2000Al -40 to 85 c km68v2000ali, KM68U2000Ali
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance recommended dc operating conditions 1) note: 1. commercial product : t a =0 to 70 c, otherwise specified industrial product : t a =-40 to 85 c, otherwise specified 2. overshoot : vcc+3.0v in case of pulse width 30ns 3. undershoot : -3.0v in case of pulse width 30ns 4. overshoot and undershoot are sampled, not 100% tested. item symbol product min typ max unit supply voltage vcc km68v2000a family KM68U2000A family 3.0 2.7 3.3 3.0 3.6 3.3 v ground vss all family 0 0 0 v input high voltage v ih km68v2000a, KM68U2000A family 2.2 - vcc+0.3 v input low voltage v il km68v2000a, KM68U2000A family -0.3 3) - 0.6 v capacitance 1) (f=1mhz, t a =25 c) 1. capacitance is sampled, not 100% tested item symbol test condition min max unit input capacitance c in v in =0v - 8 pf input/output capacitance c io v io =0v - 10 pf dc and operating characteristics 1. km68v2000a family = 35ma 2. industrial product = 15 m a item symbol test conditions min typ max unit input leakage current i li v in =vss to vcc -1 - 1 m a output leakage current i lo cs 1 =v ih or cs 2 =v il or oe =v ih or we =v il , v io =vss to vcc -1 - 1 m a operating power supply current i cc i io =0ma, cs 1 =v il , cs 2 =v ih, v in =v ih or v il - - 5 ma average operating current i cc1 cycle time=1 m s, 100%duty, i io =0ma, cs 1 0.2v, cs 2 3 vcc-0.2v, v in 0.2v - - 3 ma i cc2 cycle time=min, 100% duty, i io =0ma, cs 1 =v il , cs 2 =v ih, v in =v ih or v il - 25 30 1) ma output low voltage v ol i ol =2.1ma - - 0.4 v output high voltage v oh i oh =-1.0ma 2.4 - - v standby current(ttl) i sb cs 1 =v ih , cs2=v il , other inputs=v ih or v il - - 0.3 ma standby current(cmos) i sb1 cs 1 3 vcc-0.2v, cs 2 3 vcc-0.2v or cs 2 0.2v, other inputs=0~vcc - 0.2 10 2) m a
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance ac characteristics (km68v2000a family : v cc =3.0~3.6v, KM68U2000A family : v cc =2.7~3.3v commercial product : t a =0 to 70 c, industrial product : t a =-40 to 85 c) parameter list symbol speed bins units 70ns 85ns 100ns min max min max min max read read cycle time t rc 70 - 85 - 100 - ns address access time t aa - 70 - 85 - 100 ns chip select to output t co1 , t co2 - 70 - 85 - 100 ns output enable to valid output t oe - 35 - 40 - 50 ns chip select to low-z output t lz 10 - 10 - 10 - ns output enable to low-z output t olz 5 - 5 - 5 - ns chip disable to high-z output t hz 0 25 0 25 0 30 ns output disable to high-z output t ohz 0 25 0 25 0 30 ns output hold from address change t oh 10 - 15 - 15 - ns write write cycle time t wc 70 - 85 - 100 - ns chip select to end of write t cw 60 - 70 - 80 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 60 - 70 - 80 - ns write pulse width t wp 55 - 60 - 70 - ns write recovery time t wr 0 - 0 - 0 - ns write to output high-z t whz 0 25 0 30 0 30 ns data to write time overlap t dw 30 - 35 - 40 - ns data hold from write time t dh 0 - 0 - 0 - ns end write to output low-z t ow 5 - 5 - 5 - ns c l 1) 1. including scope and jig capacitance ac operating conditions test conditions ( test load and input/output reference) input pulse level : 0.4 to 2.2v input rising and falling time : 5ns input and output reference voltage :1.5v output load(see right) : c l =100pf+1ttl c l =30pf+1ttl data retention characteristics 1. cs 1 3 vcc-0.2v, cs 2 3 vcc-0.2v( cs 1 controlled) or cs 2 0.2v(cs 2 controlled) 2. industrial prod ucts = 15 m a item symbol test condition min typ max unit vcc for data retention v dr cs 1 3 vcc-0.2v 1) 2.0 - 3.6 v data retention current i dr vcc=3.0v, cs 1 3 vcc-0.2v 1) - 0.2 10 2) m a data retention set-up time t sdr see data retention waveform 0 - - ms recovery time t rdr 5 - -
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance address data out previous data valid data valid timming diagrams timing waveform of read cycle(1) (address controlled , cs 1 = oe =v il , cs 2 = we =v ih ) t aa t rc t oh timing waveform of read cycle(2) ( we =v ih ) data valid high-z cs 1 address oe data ou t notes (read cycle) 1. t hz and t ohz are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device interconnection. cs 2 t oh t aa t olz t lz t ohz t hz(1,2) t rc t co2 t oe t co1
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance timing waveform of write cycle(1) ( we controlled) address cs 1 t cw(2) t wr(4) timing waveform of write cycle(2) ( cs 1 controlled) address cs 1 t wc t wr(4) t as(3) cs 2 t cw(2) t wp(1) t dw t dh t ow t whz data undefined data valid we data in data out t dw t dh data valid we data in data out high-z high-z cs 2 t wc t aw t as(3) t cw(2) t wp(1) t aw
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance data retention wave form cs 1 controlled v cc 3.0/2.7v 1) 2.2v v dr cs 1 gnd data retention mode cs 1 3 v cc - 0.2v t sdr t rdr timing waveform of write cycle(3) (cs 2 controlled) address cs 1 t aw notes (write cycle) 1. a write occurs during the overlap of a low cs 1 , a high cs 2 and a low we . a write begins at the latest transition among cs 1 goes low, cs 2 going high and we going low : a write end at the earliest transition among cs 1 going high, cs 2 going low and we going high, t wp is measured from the begining of write to the end of write. 2. t cw is measured from the cs 1 going low or cs 2 going high to the end of write. 3. t as is measured from the address valid to the beginning of write. 4. t wr is measured from the end of write to the address change. t wr1 applied in case a write ends as cs 1 or we going high t wr2 applied in case a write ends as cs 2 going to low. cs 2 t cw(2) we data in data valid data out high-z high-z t cw(2) t wr(4) t wp(1) t dw t dh t as(3) t wc cs 2 controlled v cc 3.0/2.7v 1) 0.4v v dr cs 2 gnd data retention mode t sdr t rdr 1. 3.0v for km68v2000a family, 2.7v for KM68U2000A family cs 2 0.2v
cmos sram km68v2000a, KM68U2000A family revision 0.0 may 1998 advance 32 pin thin small outline package type i (0820f) #32 1.00 0.10 0.039 0.004 max 8.40 0.331 0 . 1 0 m a x 0 . 0 0 4 m a x #1 0.50 ( ) 0.020 18.40 0.10 0.724 0.004 0.45 ~0.75 0.018 ~0.030 20.00 0.20 0.787 0.008 #17 + 0.10 0.15 - 0.05 + 0.004 0.006 - 0.002 0~8 + 0.10 0.20 - 0.05 + 0.004 0.008 - 0.002 0.50 0.0197 0.25 ( ) 0.010 min 0.05 0.002 max 1.20 0.047 8 . 0 0 0 . 3 1 5 typ 0.25 0.010 #16 package dimensions units : millimeter(inch) 32 pin smaller thin small outline package type i (0813.4f) 1.00 0.10 0.039 0.004 max 8.40 0.331 1 . 1 0 m a x 0 . 0 0 4 m a x #1 0.50 ( ) 0.020 11.80 0.10 0.465 0.004 0.45 ~0.75 0.018 ~0.030 13.40 0.10 0.528 0.008 + 0.10 0.15 - 0.05 + 0.004 0.006 - 0.002 0~8 + 0.10 0.20 - 0.05 + 0.004 0.008 - 0.002 0.50 0.0197 0.25 ( ) 0.010 min 0.05 0.002 max 1.20 0.047 8 . 0 0 0 . 3 1 5 typ 0.25 0.010 #16 #32 #17
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